ISBN is

978-3-211-82395-8 / 9783211823958

MOSFET Models for VLSI Circuit Simulation: Theory and Practice (Computational Microelectronics)

by

Publisher:Springer

Edition:Hardcover

Language:English

Prices INCLUDE standard shipping to United States
Show prices without shipping
Change shipping destination/currency
Shipping prices may be approximate. Please verify cost before checkout.

About the book:

The book has 12 chapters. Starting from the overview of various aspects of device modeling for circuit simulators, a brief but complete review of seminconductor device physics and pn junction theory required for understanding MOSFET models is covered. The MOS transistor characteristics as applied to current MOS technologies are then discussed. First, the theory of MOS capacitors that is essential for understanding of MOS transistor models are discussed. This is followed by different types of MOSFET models such as threshold voltage, DC (steady-state), AC, and reliability models and the corresponding model parameter determination. The diode and MOSFET models as implemented in Berkeley SPICE, are also covered. Finally, the statistical variation of model parameters due to process variations are discussed.

Search under way...

Search complete.

Click on the price to find out more about a book.

New books: 1 - 2 of 2